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    Home/    Category/    Diode rectifier/    JANTX1N6630US

    DIODE GEN PURP 900V 1.4A E-MELF JANTX1N6630US

    JANTX1N6630US image
    The pictures are for reference only
    Brand:
    Microchip
    Model:
    JANTX1N6630US
    Description:
    DIODE GEN PURP 900V 1.4A E-MELF
    Stock:
    79680
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：13794459602(Wechat)
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    产品参数icoParameters
  • Capacitance at different Vr and F
    -
  • Current - reverse leakage at different Vr
    2 µA @ 900 V
  • Current average rectification (Io)
    1.4A
  • Diode type
    standard
  • Reverse recovery time (trr)
    50 ns
  • Supplier device packaging
    D-5B
  • Voltage DC reverse (Vr) (maximum)
    900 V
  • Voltage at different If - forward (Vf)
    1.4 V @ 1.4 A
  • packing
    bulk
  • series
    Military, MIL-PRF-19500/590
  • speed
    Rapid recovery=< 500ns,> 200mA(Io)
  • working temperature
    -
  • Encapsulation/Housing
    SQ-MELF,E
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    JANTX1N6630US（Diode rectifier）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory79680,Price reference "real-time change" China/Hongkong。 JANTX1N6630US package/specs, Download JANTX1N6630US、Datasheet。
    ICQQG images/产品内页BANNER2-主营品牌英文.jpg
    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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